Towards semi-insulating InGaAsP/InP layers by post-growth processing using Fe ion implantation and rapid thermal annealing
Identifieur interne : 000300 ( Main/Repository ); précédent : 000299; suivant : 000301Towards semi-insulating InGaAsP/InP layers by post-growth processing using Fe ion implantation and rapid thermal annealing
Auteurs : RBID : Pascal:13-0243583Descripteurs français
- Pascal (Inist)
- Effet Hall, RBS, Photoluminescence, Déformation mécanique, Méthode optimisation, Recuit thermique, Diffraction RX, Température ambiante, Propriété électrique, Couche mince, Composé quaternaire, Indium Phosphure, Composé binaire, Semiconducteur III-V, Matériau optique, InGaAsP, As Ga In P, In P, InP, 4270N, phosphoarséniure d'indium et de gallium, Photonique.
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Abstract
In this paper, we report on an effective post-growth processing technique for developing semi-insulating (SI) photonic thin films absorbing in 1.3 μm. For that purpose, we examined a 1 μm thick unintentionally n-doped In0.72Ga0.28As0.61P0.39 epilayer (0.95 eV bandgap) modified by multiple-energy MeV Fe ion implantation. Fe was chosen as a deep-level impurity. The ion beam processing was performed at room temperature, followed by rapid thermal annealing (RTA) at 800 °C for 15 s. We investigated the impact of ion fluence on electrical properties by Hall effect measurements. Channelling Rutherford backscattering spectrometry, x-ray diffraction and photoluminescence measurements were carried out to evaluate crystal quality after each fabrication step. Beyond the onset of amorphization, when the total Fe fluence was more than 4.8 × 1013 cm-2, the implanted InGaAsP layer showed evidence of a poor recrystallization after RTA, and its isolation was impaired. Maximum resistivity values were achieved below the onset of amorphization where annealing reduced ion de-channelling and recovered damage-induced strain. With a total Fe fluence of 1.6 x 1013 cm-2, the electrical resistivity and Hall mobility reached values of 1.4 x 104 Ω cm and 4 × 102 cm2 V-1 s-1. These results add important insights on the optimization of this process for the development of InP-based SI photoconductive films.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Towards semi-insulating InGaAsP/InP layers by post-growth processing using Fe ion implantation and rapid thermal annealing</title><author><name sortKey="Fekecs, Andre" uniqKey="Fekecs A">Andre Fekecs</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke</s1><s2>Sherbrooke, QC, J1K 2R1</s2><s3>CAN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Sherbrooke, QC, J1K 2R1</wicri:noRegion></affiliation></author><author><name sortKey="Chicoine, Martin" uniqKey="Chicoine M">Martin Chicoine</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Département de physique, Université de Montreal</s1><s2>Montreal, QC, H3C 3J7</s2><s3>CAN</s3><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Montreal, QC, H3C 3J7</wicri:noRegion></affiliation></author><author><name sortKey="Ilahi, Bouraoui" uniqKey="Ilahi B">Bouraoui Ilahi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke</s1><s2>Sherbrooke, QC, J1K 2R1</s2><s3>CAN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Sherbrooke, QC, J1K 2R1</wicri:noRegion></affiliation></author><author><name sortKey="Schiettekatte, Francois" uniqKey="Schiettekatte F">François Schiettekatte</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Département de physique, Université de Montreal</s1><s2>Montreal, QC, H3C 3J7</s2><s3>CAN</s3><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Montreal, QC, H3C 3J7</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Regroupement quebecois sur les materiaux de pointe</s1><s2>QC</s2><s3>CAN</s3><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Regroupement quebecois sur les materiaux de pointe</wicri:noRegion></affiliation></author><author><name sortKey="Charette, Paul G" uniqKey="Charette P">Paul G. Charette</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke</s1><s2>Sherbrooke, QC, J1K 2R1</s2><s3>CAN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Sherbrooke, QC, J1K 2R1</wicri:noRegion></affiliation></author><author><name sortKey="Ares, Richard" uniqKey="Ares R">Richard Ares</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke</s1><s2>Sherbrooke, QC, J1K 2R1</s2><s3>CAN</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Sherbrooke, QC, J1K 2R1</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Regroupement quebecois sur les materiaux de pointe</s1><s2>QC</s2><s3>CAN</s3><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Regroupement quebecois sur les materiaux de pointe</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0243583</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0243583 INIST</idno><idno type="RBID">Pascal:13-0243583</idno><idno type="wicri:Area/Main/Corpus">000A30</idno><idno type="wicri:Area/Main/Repository">000300</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-3727</idno><title level="j" type="abbreviated">J. phys., D. Appl. phys. : (Print)</title><title level="j" type="main">Journal of physics. D, Applied physics : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ambient temperature</term><term>Binary compounds</term><term>Electrical properties</term><term>Hall effect</term><term>III-V semiconductors</term><term>Indium Phosphides</term><term>Optical materials</term><term>Optimization method</term><term>Photoluminescence</term><term>Photonics</term><term>Quaternary compounds</term><term>RBS</term><term>Strains</term><term>Thermal annealing</term><term>Thin films</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Effet Hall</term><term>RBS</term><term>Photoluminescence</term><term>Déformation mécanique</term><term>Méthode optimisation</term><term>Recuit thermique</term><term>Diffraction RX</term><term>Température ambiante</term><term>Propriété électrique</term><term>Couche mince</term><term>Composé quaternaire</term><term>Indium Phosphure</term><term>Composé binaire</term><term>Semiconducteur III-V</term><term>Matériau optique</term><term>InGaAsP</term><term>As Ga In P</term><term>In P</term><term>InP</term><term>4270N</term><term>phosphoarséniure d'indium et de gallium</term><term>Photonique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this paper, we report on an effective post-growth processing technique for developing semi-insulating (SI) photonic thin films absorbing in 1.3 μm. For that purpose, we examined a 1 μm thick unintentionally n-doped In<sub>0.72</sub>Ga<sub>0.28</sub>As<sub>0.61</sub>P<sub>0.39</sub> epilayer (0.95 eV bandgap) modified by multiple-energy MeV Fe ion implantation. Fe was chosen as a deep-level impurity. The ion beam processing was performed at room temperature, followed by rapid thermal annealing (RTA) at 800 °C for 15 s. We investigated the impact of ion fluence on electrical properties by Hall effect measurements. Channelling Rutherford backscattering spectrometry, x-ray diffraction and photoluminescence measurements were carried out to evaluate crystal quality after each fabrication step. Beyond the onset of amorphization, when the total Fe fluence was more than 4.8 × 10<sup>13</sup> cm<sup>-2</sup>, the implanted InGaAsP layer showed evidence of a poor recrystallization after RTA, and its isolation was impaired. Maximum resistivity values were achieved below the onset of amorphization where annealing reduced ion de-channelling and recovered damage-induced strain. With a total Fe fluence of 1.6 x 10<sup>13</sup> cm<sup>-2</sup>, the electrical resistivity and Hall mobility reached values of 1.4 x 10<sup>4</sup> Ω cm and 4 × 10<sup>2</sup> cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>. These results add important insights on the optimization of this process for the development of InP-based SI photoconductive films.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-3727</s0></fA01><fA02 i1="01"><s0>JPAPBE</s0></fA02><fA03 i2="1"><s0>J. phys., D. 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All rights reserved.</s1></fA44><fA45><s0>31 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0243583</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of physics. D, Applied physics : (Print)</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>In this paper, we report on an effective post-growth processing technique for developing semi-insulating (SI) photonic thin films absorbing in 1.3 μm. For that purpose, we examined a 1 μm thick unintentionally n-doped In<sub>0.72</sub>Ga<sub>0.28</sub>As<sub>0.61</sub>P<sub>0.39</sub> epilayer (0.95 eV bandgap) modified by multiple-energy MeV Fe ion implantation. Fe was chosen as a deep-level impurity. The ion beam processing was performed at room temperature, followed by rapid thermal annealing (RTA) at 800 °C for 15 s. We investigated the impact of ion fluence on electrical properties by Hall effect measurements. Channelling Rutherford backscattering spectrometry, x-ray diffraction and photoluminescence measurements were carried out to evaluate crystal quality after each fabrication step. Beyond the onset of amorphization, when the total Fe fluence was more than 4.8 × 10<sup>13</sup> cm<sup>-2</sup>, the implanted InGaAsP layer showed evidence of a poor recrystallization after RTA, and its isolation was impaired. Maximum resistivity values were achieved below the onset of amorphization where annealing reduced ion de-channelling and recovered damage-induced strain. With a total Fe fluence of 1.6 x 10<sup>13</sup> cm<sup>-2</sup>, the electrical resistivity and Hall mobility reached values of 1.4 x 10<sup>4</sup> Ω cm and 4 × 10<sup>2</sup> cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>. 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